English

Epitaxial stabilization of thin films of the frustrated Ge-based spinels

Strongly Correlated Electrons 2021-06-30 v3

Abstract

Frustrated magnets can host numerous exotic many-body quantum and topological phenomena. GeNi2_2O4_4 is a three dimensional S=1S=1 frustrated magnet with an unusual two-stage transition to the two-dimensional antiferromagnetic ground state, while GeCu2_2O4_4 is a high-pressure phase with a strongly tetragonally elongated spinel structure and magnetic lattice formed by S=1/2S=1/2 CuO2_2 linear chains with frustrated exchange interactions and exotic magnetic behavior. Here we report on the first thin-film epitaxial stabilization of these two compounds. Developed growth mode, surface morphology, crystal structure and copper valence state were characterized by in-situ reflection high-energy electron diffraction, atomic force microscopy, X-ray reflectivity, X-ray diffraction, X-ray photoelectron spectroscopy and resonant X-ray absorption spectroscopy. Our results pave an alternative route to the comprehensive investigation of the puzzling magnetic properties of these compounds and exploration of novel emergent features driven by strain.

Keywords

Cite

@article{arxiv.1907.07785,
  title  = {Epitaxial stabilization of thin films of the frustrated Ge-based spinels},
  author = {Denis M. Vasiukov and Mikhail Kareev and Fangdi Wen and Liang Wu and Padraic Shafer and Elke Arenholz and Xiaoran Liu and Jak Chakhalian},
  journal= {arXiv preprint arXiv:1907.07785},
  year   = {2021}
}