Epitaxial aluminum contacts to InAs nanowires

N. L. B. Ziino; P. Krogstrup; M. H. Madsen; E. Johnson; J. B. Wagner; C. M. Marcus; J. Nygård; T. S. Jespersen

Epitaxial aluminum contacts to InAs nanowires

Materials Science 2013-09-19 v1 Mesoscale and Nanoscale Physics Superconductivity

Authors: N. L. B. Ziino , P. Krogstrup , M. H. Madsen , E. Johnson , J. B. Wagner , C. M. Marcus , J. Nygård , T. S. Jespersen

View on arXiv ↗ PDF ↗

Abstract

We report a method for making epitaxial superconducting contacts to semiconducting nanowires. The temperature and gate characteristics demonstrate barrier-free electrical contact, and the properties in the superconducting state are investigated at low temperature. Half-covering aluminum contacts are realized without the need of lithography and we demonstrate how to controllably insert high-band gap layers in the interface region. These developments are relevant to hybrid superconductor-nanowire devices that support Majorana zero energy states.

Keywords

epitaxial contacts aluminum inas nanowires superconducting contacts majorana zero energy states hybrid devices semiconductor nanowires

Cite

@article{arxiv.1309.4569,
  title  = {Epitaxial aluminum contacts to InAs nanowires},
  author = {N. L. B. Ziino and P. Krogstrup and M. H. Madsen and E. Johnson and J. B. Wagner and C. M. Marcus and J. Nygård and T. S. Jespersen},
  journal= {arXiv preprint arXiv:1309.4569},
  year   = {2013}
}

Epitaxial aluminum contacts to InAs nanowires

Abstract

Keywords

Cite

Related papers