Enhanced Light Emission from Erbium Doped Silicon Nitride in Plasmonic Metal-Insulator-Metal Structures
Optics
2015-05-14 v2
Abstract
Plasmonic gratings and nano-particle arrays in a metal-insulator-metal structures are fabricated on an erbium doped silicon nitride layer. This material system enables simple fabrication of the structure, since the active nitride layer can be directly grown on metal. Enhancement of collected emission of up to 12 is observed on resonance, while broad off-resonant enhancement is also present. The output polarization behavior of the gratings and nano-particle arrays is investigated and matched to plasmonic resonances, and the behavior of coupled modes as a function of inter-particle distance is also discussed.
Keywords
Cite
@article{arxiv.0908.3901,
title = {Enhanced Light Emission from Erbium Doped Silicon Nitride in Plasmonic Metal-Insulator-Metal Structures},
author = {Yiyang Gong and Selcuk Yerci and Rui Li and Luca Dal Negro and Jelena Vuckovic},
journal= {arXiv preprint arXiv:0908.3901},
year = {2015}
}
Comments
9 pages, 6 figures updated because pdf was still non-functional