Large tunable photonic band gaps in nanostructured doped semiconductors
Optics
2010-11-10 v1 Mesoscale and Nanoscale Physics
Abstract
A plasmonic nanostructure conceived with periodic layers of a doped semiconductor and passive semiconductor is shown to generate spontaneously surface plasmon polaritons thanks to its periodic nature. The nanostructure is demonstrated to behave as an effective material modeled by a simple dielectric function of ionic-crystal type, and possesses a fully tunable photonic band gap, with widths exceeding 50%, in the region extending from mid-infra-red to Tera-Hertz.
Keywords
Cite
@article{arxiv.1011.2124,
title = {Large tunable photonic band gaps in nanostructured doped semiconductors},
author = {J. Leon and T. Taliercio},
journal= {arXiv preprint arXiv:1011.2124},
year = {2010}
}
Comments
6 pages, 4 figures, published