Altermagnets are a promising class of materials for spintronic applications. However, compounds that simultaneously combine the symmetry required to support an anomalous Hall effect with good metallic conductivity and magnetic ordering temperatures well above room temperature remain elusive. Here, we demonstrate that partial substitution of Cr by Mn in epitaxial CrSb(100) thin films provides a viable route to engineer the combined structural and magnetic symmetry necessary to enable an otherwise symmetry-forbidden anomalous Hall effect. By systematically exploring the magnetic phase diagram Cr1−xMnxSb thin films, we identify a pronounced anomalous Hall effect in Cr0.75Mn0.25Sb. Guided by Landau theory, we model the field-driven reorientation of the N\'eel vector and the resulting anomalous Hall response, achieving good qualitative agreement with the experimental observations.
@article{arxiv.2602.06173,
title = {Engineering altermagnetic symmetry to enable anomalous Hall response in Cr$_{1-x}$Mn$_x$Sb},
author = {Miriam G. Fischer and Lukas Odenbreit and Olena Gomonay and Jairo Sinova and Thibaud Denneulin and Joseph V. Vaz and Rafal E. Dunin-Borkowski and Tommy Kotte and Toni Helm and Mathias Kläui and Martin Jourdan},
journal= {arXiv preprint arXiv:2602.06173},
year = {2026}
}