Electronic Transport Properties of Carrier Controlled SnSe Single Crystals

Aichi Yamashita; Osamu Ogiso; Ryo Matsumoto; Masashi Tanaka; Hiroshi Hara; Hiromi Tanaka; Hiroyuki Takeya; Chul-Ho Lee; Yoshihiko Takano

Electronic Transport Properties of Carrier Controlled SnSe Single Crystals

Materials Science 2017-10-06 v1

Authors: Aichi Yamashita , Osamu Ogiso , Ryo Matsumoto , Masashi Tanaka , Hiroshi Hara , Hiromi Tanaka , Hiroyuki Takeya , Chul-Ho Lee , Yoshihiko Takano

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Abstract

We found that the electronic transport property of SnSe single crystals was sensitive to oxygen content. Semiconducting SnSe single crystals were obtained by using Sn of grain form as a starting material while powder Sn resulted in metallic SnSe. X-ray photoelectron spectroscopy analysis revealed that the surfaces of raw Sn were oxidized, where the volume fraction was relatively low in grain Sn. This demonstrates that contamination of oxygen causes metallic behavior in grown SnSe single crystals.

Keywords

SnSe single crystals electronic transport properties carrier control oxygen contamination semiconducting behavior metallic behavior X-ray photoelectron spectroscopy

Cite

@article{arxiv.1710.01863,
  title  = {Electronic Transport Properties of Carrier Controlled SnSe Single Crystals},
  author = {Aichi Yamashita and Osamu Ogiso and Ryo Matsumoto and Masashi Tanaka and Hiroshi Hara and Hiromi Tanaka and Hiroyuki Takeya and Chul-Ho Lee and Yoshihiko Takano},
  journal= {arXiv preprint arXiv:1710.01863},
  year   = {2017}
}

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13 pages, 3 figures

Electronic Transport Properties of Carrier Controlled SnSe Single Crystals

Abstract

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