Electronic structures of impurities and point defects in semiconductors
Materials Science
2020-06-02 v2
Abstract
A brief history of the impurity theories in semiconductors is provided. A bound exciton model is proposed for both donor- and acceptor- like impurities and point defects, which offers a unified understanding for "shallow" and "deep" impurities and point defects. The underlying physics of computational results using different density-functional theory based approaches are discussed and interpreted in the framework of the bound exciton model.
Keywords
Cite
@article{arxiv.1709.04058,
title = {Electronic structures of impurities and point defects in semiconductors},
author = {Yong Zhang},
journal= {arXiv preprint arXiv:1709.04058},
year = {2020}
}
Comments
40 pages, 9 figures, 1 table