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Electronic-Structure-Driven Magnetic Ordering in a Kondo Semiconductor CeOs2Al10

Strongly Correlated Electrons 2015-05-19 v2

Abstract

We report the anisotropic changes in the electronic structure of a Kondo semiconductor CeOs2_2Al10_{10} across an anomalous antiferromagnetic ordering temperature (T0T_0) of 29 K, using optical conductivity spectra. The spectra along the aa- and cc-axes indicate that a cc-ff hybridization gap emerges from a higher temperature continuously across T0T_0. Along the b-axis, on the other hand, a different energy gap with a peak at 20 meV appears below 39 K, which is higher temperature than T0T_0, because of structural distortion. The onset of the energy gap becomes visible below T0T_0. Our observation reveals that the electronic structure as well as the energy gap opening along the b-axis due to the structural distortion induces antiferromagnetic ordering below T0T_0.

Keywords

Cite

@article{arxiv.1005.4174,
  title  = {Electronic-Structure-Driven Magnetic Ordering in a Kondo Semiconductor CeOs2Al10},
  author = {S. Kimura and T. Iizuka and H. Miyazaki and A. Irizawa and Y. Muro and T. Takabatake},
  journal= {arXiv preprint arXiv:1005.4174},
  year   = {2015}
}

Comments

4 pages, 4 figures

R2 v1 2026-06-21T15:26:37.900Z