Band structure and optical properties of defect- Chalcopyrite type semiconductor ZnIn2Te4 have been studied by TB-LMTO first principle technique. The optical absorption calculation suggest that ZnIn2Te4 is a direct-gap semiconductor having a band gap of 1.40 eV., which confirms the experimentally measured value. The calculated complex dielectric-function ϵ(E)=ϵ1(E)+iϵ2(E) reveal distinct structures at energies of the critical points in the Brillouin zone.
@article{arxiv.cond-mat/0212121,
title = {Electronic and Optical Properties of ZnIn$_2$Te$_4$},
author = {Biplab Ganguli and Kamal Krishna Saha and Tanusri Saha-Dasgupta and Abhijit Mookerjee and A. K. Bhattacharya},
journal= {arXiv preprint arXiv:cond-mat/0212121},
year = {2009}
}