English

Electron-boson glue function derived from electronic Raman scattering

Superconductivity 2015-05-19 v1

Abstract

Raman scattering cross sections depend on photon polarization. In the cuprates nodal and antinodal directions are weighted more strongly in B2gB_{2g} and B1gB_{1g} symmetry, respectively. On the other hand in angle-resolved photoemission spectroscopy (ARPES), electronic properties are measured along well-defined directions in momentum space rather than their weighted averages. In contrast, the optical conductivity involves a momentum average over the entire Brillouin zone. Newly measured Raman response data on high-quality Bi2_2Sr2_2CaCu2_2O8+δ_{8+\delta} single crystals up to high energies have been inverted using a modified maximum entropy inversion technique to extract from B1gB_{1g} and B2gB_{2g} Raman data corresponding electron-boson spectral densities (glue) are compared to the results obtained with known ARPES and optical inversions. We find that the B2gB_{2g} spectrum agrees qualitatively with nodal direction ARPES while the B1gB_{1g} looks more like the optical spectrum. A large peak around 304030 - 40\,meV in B1gB_{1g}, much less prominent in B2gB_{2g}, is taken as support for the importance of (π,π)(\pi,\pi) scattering at this frequency.

Keywords

Cite

@article{arxiv.1009.1085,
  title  = {Electron-boson glue function derived from electronic Raman scattering},
  author = {B. Muschler and W. Prestel and E. Schachinger and J. P. Carbotte and R. Hackl and Shimpei Ono and Yoichi Ando},
  journal= {arXiv preprint arXiv:1009.1085},
  year   = {2015}
}

Comments

7 pages, 3 figures

R2 v1 2026-06-21T16:10:04.118Z