The doped Hubbard model is one of the paradigmatic platforms to engineer exotic quantum many-body states, including charge-ordered states, strange metals and unconventional superconductors. While undoped and doped correlated phases have been experimentally realized in a variety twisted van der Waals materials, experiments in monolayer materials, and in particular 1T transition metal dichalcogenides, have solely reached the conventional insulating undoped regime. Correlated phases in monolayer two-dimensional materials have much higher associated energy scales than their twisted counterparts, making doped correlated monolayers an attractive platform for high temperature correlated quantum matter. Here, we demonstrate the realization of a doped Mott phase in a van der Waals dichalcogenide 1T-NbSe2 monolayer. The system is electron doped due to electron transfer to a monolayer van der Waals substrate via proximity, leading to a correlated triangular lattice with both half-filled and fully-filled sites. We analyze the distribution of the half-filled and filled sites and show the arrangement is unlikely to be controlled by disorder alone, and we show that the presence of competing non-local many-body correlations would account for the charge correlations found experimentally. Our results establish 1T-NbSe2 as a potential monolayer platform to explore correlated doped Mott physics in a frustrated lattice.
@article{arxiv.2401.08296,
title = {Doped Mott phase and charge correlations in monolayer 1T-NbSe$_2$},
author = {Xin Huang and Jose L. Lado and Jani Sainio and Peter Liljeroth and Somesh Chandra Ganguli},
journal= {arXiv preprint arXiv:2401.08296},
year = {2025}
}