Dispersive sensing in hybrid InAs/Al nanowires

Deividas Sabonis; Eoin C. T. O'Farrell; Davydas Razmadze; David M. T. van Zanten; Judith Suter; Peter Krogstrup; Charles M. Marcus

doi:10.1063/1.5116377

Dispersive sensing in hybrid InAs/Al nanowires

Mesoscale and Nanoscale Physics 2020-04-27 v1 Superconductivity

Authors: Deividas Sabonis , Eoin C. T. O'Farrell , Davydas Razmadze , David M. T. van Zanten , Judith Suter , Peter Krogstrup , Charles M. Marcus

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Abstract

Dispersive charge sensing is realized in hybrid semiconductor-superconductor nanowires in gate-defined single- and double-island device geometries. Signal-to-noise ratios (SNRs) were measured both in the frequency and time domain. Frequency-domain measurements were carried out as a function of frequency and power and yield a charge sensitivity of $1 \times 10^{-3} e/\sqrt{\rm Hz}$ for an 11 MHz measurement bandwidth. Time-domain measurements yield SNR > 1 for 20 $\mu$ s integration time. At zero magnetic field, photon-assisted tunneling was detected dispersively in a double-island geometry, indicating coherent hybridization of the two superconducting islands. At an axial magnetic field of 0.6 T, subgap states are detected dispersively, demonstrating the suitability of the method for sensing in the topological regime.

Keywords

dispersive charge sensing semiconductor-superconductor nanowire signal-to-noise ratio photon-assisted tunneling subgap states topological regime

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@article{arxiv.1906.10659,
  title  = {Dispersive sensing in hybrid InAs/Al nanowires},
  author = {Deividas Sabonis and Eoin C. T. O'Farrell and Davydas Razmadze and David M. T. van Zanten and Judith Suter and Peter Krogstrup and Charles M. Marcus},
  journal= {arXiv preprint arXiv:1906.10659},
  year   = {2020}
}

Dispersive sensing in hybrid InAs/Al nanowires

Abstract

Keywords

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