Understanding the spatial distribution of charge carriers in III-V nanowires proximity coupled to superconductors is important for the design and interpretation of experiments based on hybrid quantum devices. In this letter, the gate-dependent surface accumulation layer of InAsSb/Al nanowires was studied by means of Andreev interference in a parallel magnetic field. Both uniform hybrid nanowires and devices featuring a short Josephson junction fabricated by shadow lithography, exhibited periodic modulation of the switching current. The period corresponds to a flux quantum through the nanowire diameter and is consistent with Andreev bound states occupying a cylindrical surface accumulation layer. The spatial distribution was tunable by a gate potential as expected from electrostatic models.
@article{arxiv.2104.00723,
title = {Andreev interference in the surface accumulation layer of half-shell InAsSb/Al hybrid nanowires},
author = {Lukas Stampfer and Damon J. Carrad and Dags Olsteins and Christian E. N. Petersen and Sabbir A. Khan and Peter Krogstrup and Thomas S. Jespersen},
journal= {arXiv preprint arXiv:2104.00723},
year = {2021}
}