Dipole trap model for the metallic state in gated silicon-inversion layers
Strongly Correlated Electrons
2015-05-14 v1 Disordered Systems and Neural Networks
Abstract
In order to investigate the metallic state in high-mobility Si-MOS structures, we have further developed and precised the dipole trap model which was originally proposed by B.L. Altshuler and D.L. Maslov [Phys. Rev. Lett.\ 82, 145 (1999)]. Our additional numerical treatment enables us to drop several approximations and to introduce a limited spatial depth of the trap states inside the oxide as well as to include a distribution of trap energies. It turns out that a pronounced metallic state can be caused by such trap states at appropriate energies whose behavior is in good agreement with experimental observations.
Keywords
Cite
@article{arxiv.1001.0205,
title = {Dipole trap model for the metallic state in gated silicon-inversion layers},
author = {T. Hörmann and G. Brunthaler},
journal= {arXiv preprint arXiv:1001.0205},
year = {2015}
}
Comments
16 pages, 10 figures, submitted