We propose a method to realize diluted magnetic semiconductors (DMS) with p- and n-type carriers by choosing host semiconductors with a narrow band gap. By employing a combination of the density function theory and quantum Monte Carlo simulation, we demonstrate such semiconductors using Mn-doped BaZn2As2, which has a band gap of 0.2 eV. In addition, we found a new non-toxic DMS Mn-doped BaZn2Sb2, of which the Curie temperature Tc is predicted to be higher than that of Mn-doped BaZn2As2, the Tc of which was up to 230 K in the recent experiment.
@article{arxiv.1601.05165,
title = {Diluted magnetic semiconductors with narrow band gaps},
author = {Bo Gu and Sadamichi Maekawa},
journal= {arXiv preprint arXiv:1601.05165},
year = {2016}
}