Diffuse-interface model for nanopatterning induced by self-sustained ion etch masking
Materials Science
2016-08-14 v2
Abstract
We construct a simple phenomenological diffuse-interface model for composition-induced nanopatterning during ion sputtering of alloys. In simulations, this model reproduces without difficulties the high-aspect ratio structures and tilted pillars observed in experiments. We investigate the time evolution of the pillar height, both by simulations and by {\it in situ} ellipsometry. The analysis of the simulation results yields a good understanding of the transitions between different growth regimes and supports the role of segregation in the pattern-formation process.
Keywords
Cite
@article{arxiv.1003.1274,
title = {Diffuse-interface model for nanopatterning induced by self-sustained ion etch masking},
author = {S. Le Roy and E. Søndergård and M. Kildemo and I. S. Nerbø and M. Plapp},
journal= {arXiv preprint arXiv:1003.1274},
year = {2016}
}
Comments
10 pages, 3 figures; minor revisions with respect to first version; figures nicened; journal ref. added