We report the synthesis and properties of a new layered tetragonal ternary compound CsMn4As3 (structure: KCu4S3-type, space group: P4/mmm, No. 123 and Z=2). The material is a small band-gap semiconductor and exhibits an antiferromagnetic ground state associated with Mn spins. The compound exhibits a signature of a distinct magnetic moment canting event at 150(5)~K with a canting angle of ≈0.3∘. Although, some features of the magnetic characteristics of this new compound are qualitatively similar to those of the related BaMn2As2, the underlying Mn sublattices of the two materials are quite different. While the Mn square-lattice layers in BaMn2As2 are equally spaced along the c-direction with the interlayer distance dLBa=6.7341(4) Ang., the Mn sublattice forms bilayers in CsMn4As3 with the interlayer distance within a bilayer dLCs=3.1661(6) Ang. and the distance between the two adjacent bilayers dB=7.290(6) Ang. This difference in the Mn sublattice is bound to significantly alter the energy balance between the J1, J2 and Jc exchange interactions within the J1-J2-Jc model compared to that in BaMn2As2 and the other related 122 compounds including the well-known iron-arsenide superconductor parent compound BaFe2As2. Owing to the novelty of its transition metal sublattice, this new addition to the family of tetragonal materials related to the iron-based superconductors brings prospects for doping and pressure studies in the search of new superconducting phases as well as other exciting correlated-electron properties.
@article{arxiv.1904.04598,
title = {CsMn$_4$As$_3$: A layered tetragonal transition-metal pnictide compound with antiferromagnetic ground state},
author = {Abhishek Pandey and Saroj L. Samal and David C. Johnston},
journal= {arXiv preprint arXiv:1904.04598},
year = {2019}
}