English

Crystallization in the Fractional Quantum Hall Regime with Disorder-Aware Neural Quantum States

Strongly Correlated Electrons 2026-04-09 v1

Abstract

We present the first microscopic demonstration of a disorder-pinned hole Wigner crystal (WC), providing a natural explanation for the reentrant integer quantum Hall effect observed near ν=2/3\nu=2/3, as well as its analogs in fractional Chern insulators. We further identify a novel crossover regime above filling ν=2/3\nu=2/3 that connects this hole WC to an electron WC, characterized by a network-like electron density structure. To uncover these phenomena, we use neural-network variational Monte Carlo (NNVMC) with a disorder-aware self-attention neural quantum state that describes both fractional quantum Hall (FQH) liquids and Wigner crystals within a single unbiased variational framework. More broadly, our method establishes a unified phase diagram that exposes a fundamental asymmetry in crystallization across half-filling: near ν=1/3\nu=1/3, increasing LL mixing and disorder both stabilize an electron WC, whereas near ν=2/3\nu=2/3, the hole WC dominates at weak LL mixing and ultimately gives way to the electron WC at strong LL mixing.

Keywords

Cite

@article{arxiv.2604.06316,
  title  = {Crystallization in the Fractional Quantum Hall Regime with Disorder-Aware Neural Quantum States},
  author = {Jihang Zhu and Yi Huang and Xiaodong Hu and Di Xiao and Ting Cao},
  journal= {arXiv preprint arXiv:2604.06316},
  year   = {2026}
}

Comments

10 pages, 4 figures