Crystallization in the Fractional Quantum Hall Regime with Disorder-Aware Neural Quantum States
Abstract
We present the first microscopic demonstration of a disorder-pinned hole Wigner crystal (WC), providing a natural explanation for the reentrant integer quantum Hall effect observed near , as well as its analogs in fractional Chern insulators. We further identify a novel crossover regime above filling that connects this hole WC to an electron WC, characterized by a network-like electron density structure. To uncover these phenomena, we use neural-network variational Monte Carlo (NNVMC) with a disorder-aware self-attention neural quantum state that describes both fractional quantum Hall (FQH) liquids and Wigner crystals within a single unbiased variational framework. More broadly, our method establishes a unified phase diagram that exposes a fundamental asymmetry in crystallization across half-filling: near , increasing LL mixing and disorder both stabilize an electron WC, whereas near , the hole WC dominates at weak LL mixing and ultimately gives way to the electron WC at strong LL mixing.
Keywords
Cite
@article{arxiv.2604.06316,
title = {Crystallization in the Fractional Quantum Hall Regime with Disorder-Aware Neural Quantum States},
author = {Jihang Zhu and Yi Huang and Xiaodong Hu and Di Xiao and Ting Cao},
journal= {arXiv preprint arXiv:2604.06316},
year = {2026}
}
Comments
10 pages, 4 figures