English

Crystallization in the Fractional Quantum Hall Regime Induced by Landau-level Mixing

Strongly Correlated Electrons 2018-09-25 v2

Abstract

The interplay between strongly correlated liquid and crystal phases for two-dimensional electrons exposed to a high transverse magnetic field is of fundamental interest. Through the non-perturbative fixed phase diffusion Monte Carlo method, we determine the phase diagram of the Wigner crystal in the νκ\nu-\kappa plane, where ν\nu is the filling factor and κ\kappa is the strength of Landau level mixing. The phase boundary is seen to exhibit a striking ν\nu dependence, with the states away from the magic filling factors ν=n/(2pn+1)\nu=n/(2pn+1) being much more susceptible to crystallization due to Landau level mixing than those at ν=n/(2pn+1)\nu=n/(2pn+1). Our results explain the qualitative difference between the experimental behaviors observed in n-doped and p-doped GaAs quantum wells, and, in particular, the existence of an insulating state for ν<1/3\nu<1/3 and also for 1/3<ν<2/51/3 <\nu< 2/5 in low density p-doped systems. We predict that in the vicinity of ν=1/5\nu=1/5 and ν=2/9\nu=2/9, increasing LL mixing causes a transition not into an ordinary electron Wigner crystal but rather into a strongly correlated crystal of composite fermions carrying two vortices.

Keywords

Cite

@article{arxiv.1801.06695,
  title  = {Crystallization in the Fractional Quantum Hall Regime Induced by Landau-level Mixing},
  author = {Jianyun Zhao and Yuhe Zhang and J. K. Jain},
  journal= {arXiv preprint arXiv:1801.06695},
  year   = {2018}
}

Comments

12 pages, 11 figures