We present experimental data and computational analysis of the formation of GaN nanowires on graphene virtual substrates. We show that GaN nanowires on graphene exhibit nitrogen polarity. We employ the DFT-based computational analysis to demonstrate that among different possible configurations of Ga and N atoms only the N-polar one is stable. We suggest that polarity discrimination occurs due to the dipole interaction between the GaN nanocrystal and π-orbitals of the graphene sheet.
@article{arxiv.2107.10231,
title = {Crystal polarity discrimination for GaN nanowires on graphene},
author = {Alexander Pavlov and Alexey Mozharov and Yury Berdnikov and Camille Barbier and Jean-Christophe Harmand and Maria Tchernycheva and Roman Polozkov and Ivan Mukhin},
journal= {arXiv preprint arXiv:2107.10231},
year = {2021}
}