English

Critical side channel effects in random bit generation with multiple semiconductor lasers in a polarization-based quantum key distribution system

Quantum Physics 2017-10-11 v1

Abstract

Most polarization-based BB84 quantum key distribution (QKD) systems utilize multiple lasers to generate one of four polarization quantum states randomly. However, random bit generation with multiple lasers can potentially open critical side channels, which significantly endangers the security of QKD systems. In this paper, we show unnoticed side channels of temporal disparity and intensity fluctuation, which possibly exist in the operation of multiple semiconductor laser diodes. Experimental results show that the side channels can enormously degrade security performance of QKD systems. An important system issue for the improvement of quantum bit error rate (QBER) related with laser driving condition is furtherly addressed with experimental results.

Keywords

Cite

@article{arxiv.1706.08705,
  title  = {Critical side channel effects in random bit generation with multiple semiconductor lasers in a polarization-based quantum key distribution system},
  author = {Heasin Ko and Byung-Seok Choi and Joong-Seon Choe and Kap-Joong Kim and Jong-Hoi Kim and Chun Ju Youn},
  journal= {arXiv preprint arXiv:1706.08705},
  year   = {2017}
}

Comments

11 pages

R2 v1 2026-06-22T20:30:39.171Z