Critical exponents at the superconductor-insulator transition in dirty-boson systems
Abstract
I obtain the inverse of the correlation length exponent at the superfluid-Bose glass quantum critical point as a series in small parameter , with d being the dimensionality of the system, and compute the first two terms using a novel field-theoretic technique. For d=2 I find and , for short-range and Coulomb interactions between bosons, respectively. When combined with the exact values of the dynamical critical exponents and , these results are in quantitative agreement with the experiments on onset of superfluidity in in porous glasses, and on superconductor-insulator transition in homogeneous metallic films, in support of the dirty-boson theory fot the latter. Higher-order calculation of the exponents and of the universal conductivity is discussed.
Keywords
Cite
@article{arxiv.cond-mat/0001040,
title = {Critical exponents at the superconductor-insulator transition in dirty-boson systems},
author = {Igor F. Herbut},
journal= {arXiv preprint arXiv:cond-mat/0001040},
year = {2009}
}
Comments
4 pages, RevTex, eq. 10 corrected