English

Critical exponents at the superconductor-insulator transition in dirty-boson systems

Superconductivity 2009-10-31 v2 Disordered Systems and Neural Networks

Abstract

I obtain the inverse of the correlation length exponent at the superfluid-Bose glass quantum critical point as a series in small parameter d1\sqrt{d-1}, with d being the dimensionality of the system, and compute the first two terms using a novel field-theoretic technique. For d=2 I find νs=0.81\nu_s = 0.81 and νc=1.03\nu_c = 1.03, for short-range and Coulomb interactions between bosons, respectively. When combined with the exact values of the dynamical critical exponents zs=dz_s = d and zc=1z_c = 1, these results are in quantitative agreement with the experiments on onset of superfluidity in 4He^4 He in porous glasses, and on superconductor-insulator transition in homogeneous metallic films, in support of the dirty-boson theory fot the latter. Higher-order calculation of the exponents and of the universal conductivity is discussed.

Keywords

Cite

@article{arxiv.cond-mat/0001040,
  title  = {Critical exponents at the superconductor-insulator transition in dirty-boson systems},
  author = {Igor F. Herbut},
  journal= {arXiv preprint arXiv:cond-mat/0001040},
  year   = {2009}
}

Comments

4 pages, RevTex, eq. 10 corrected