Coriolis force, geometric phase, and spin-electric coupling in semiconductors
Abstract
We consider the response of an effective spin of a charge carrier to an adiabatic rotation of its crystal momentum induced by electric field. This rotation gives rise to Coriolis pseudo-force that is responsible for torque acting on the orbital momentum of a particle. Mediated by a spin-orbit coupling in the valence band this perturbation leads to a spin-electric coupling that may affect the coherent transport properties of a charge carrier and cause a spin precession in zero magnetic fields. In the static uniform electric field the derived effective spin-Hamiltonians of the carriers in the conduction and light hole bands are homologous to the Rashba Hamiltonian. These effects may be also interpreted as a manifestation of, in general, a non-Abelian gauge potential and can be described in purely geometric terms as a consequence of the corresponding holonomy. We demonstrate that in the conduction band the strength of the associated covariant gauge field is proportional to the effective electron g-tensor and is controllable by gate fields or a strain applied to the crystal.
Cite
@article{arxiv.cond-mat/0504183,
title = {Coriolis force, geometric phase, and spin-electric coupling in semiconductors},
author = {Yuri A. Serebrennikov},
journal= {arXiv preprint arXiv:cond-mat/0504183},
year = {2009}
}
Comments
The minor error in the estimate of the strength of the covariant gauge field in the conduction band of wide gap semiconductors (p.5 of the published article) was corrected