We analyze the cross-resonance effect for fluxonium circuits and investigate a two-qubit gate scheme based on selective darkening of a transition. In this approach, two microwave pulses at the frequency of the target qubit are applied simultaneously with a proper ratio between their amplitudes to achieve a controlled-NOT operation. We study in detail coherent gate dynamics and calculate gate error. With nonunitary effects accounted for, we demonstrate that gate error below 10−4 is possible for realistic hardware parameters. This number is facilitated by long coherence times of computational transitions and strong anharmonicity of fluxoniums, which easily prevents excitation to higher excited states during the gate microwave drive.
@article{arxiv.2202.04583,
title = {CNOT gates for fluxonium qubits via selective darkening of transitions},
author = {Konstantin N. Nesterov and Chen Wang and Vladimir E. Manucharyan and Maxim G. Vavilov},
journal= {arXiv preprint arXiv:2202.04583},
year = {2022}
}