English

Charge transport in amorphous Hf$_{0.5}$Zr$_{0.5}$O$_2$

Materials Science 2015-03-18 v2

Abstract

In this study, we demonstrated experimentally and theoretically that the charge transport mechanism in amorphous Hf0.5_{0.5}Zr0.5_{0.5}O2_2 is phonon-assisted tunneling between traps like in HfO2_2 and ZrO2_2. The thermal trap energy of 1.25 eV and optical trap energy of 2.5 eV in Hf0.5_{0.5}Zr0.5_{0.5}O2_2 were determined based on comparison of experimental data on transport with different theories of charge transfer in dielectrics. A hypothesis that oxygen vacancies are responsible for the charge transport in Hf0.5_{0.5}Zr0.5_{0.5}O2_2 was discussed.

Keywords

Cite

@article{arxiv.1501.02370,
  title  = {Charge transport in amorphous Hf$_{0.5}$Zr$_{0.5}$O$_2$},
  author = {D. R. Islamov and T. V. Perevalov and V. A. Gritsenko and C. H. Cheng and A. Chin},
  journal= {arXiv preprint arXiv:1501.02370},
  year   = {2015}
}

Comments

4 pages, 3 figures, 1 table