English

Charge transfer across transition metal oxide interfaces: emergent conductance and new electronic structure

Materials Science 2015-06-22 v2 Strongly Correlated Electrons

Abstract

We perform density functional theory plus dynamical mean field theory calculations to investi- gate internal charge transfer in an artificial superlattice composed of alternating layers of vanadate and manganite perovskite and Ruddlesden-Popper structure materials. We show that the elec- tronegativity difference between vanadium and manganese causes moderate charge transfer from VO2 to MnO2 layers in both perovskite and Ruddlesden-Popper based superlattices, leading to hole doping of the VO2 layer and electron doping of the MnO2 layer. Comparison of the perovskite and Ruddlesden-Popper based heterostructures provides insights into the role of the apical oxy- gen. Our first principles simulations demonstrate that the combination of internal charge transfer and quantum confinement provided by heterostructuring is a powerful approach to engineering electronic structure and tailoring correlation effects in transition metal oxides.

Keywords

Cite

@article{arxiv.1408.0217,
  title  = {Charge transfer across transition metal oxide interfaces: emergent conductance and new electronic structure},
  author = {Hanghui Chen and Hyowon Park and Andrew J. Millis and Chris A. Marianetti},
  journal= {arXiv preprint arXiv:1408.0217},
  year   = {2015}
}

Comments

10 figures and 3 tables