Charge profile of surface doped C60
Superconductivity
2009-11-07 v2
Abstract
We study the charge profile of a C60-FET (field effect transistor) as used in the experiments of Schoen, Kloc and Batlogg. Using a tight-binding model, we calculate the charge profile treating the Coulomb interaction in a mean-field approximation. The charge profile behaves similarly to the case of a continuous space-charge layer, in particular it is confined to a single interface layer for doping higher than ~0.3 electron (or hole) per C60 molecule. The morahedral disorder of the C60 molecules smoothens the structure in the density of states.
Cite
@article{arxiv.cond-mat/0106433,
title = {Charge profile of surface doped C60},
author = {Samuel Wehrli and Didier Poilblanc and T. M. Rice},
journal= {arXiv preprint arXiv:cond-mat/0106433},
year = {2009}
}
Comments
6 pages, 9 figures