English

Charge centers in CaF$_2$: Ab initio calculation of elementary physical properties

Materials Science 2009-11-11 v1

Abstract

Charge centers in ionic crystals provide a channel for elementary interaction between electromagnetic radiation and the lattice. We calculate the electronic ground state energies which are needed to create a charge center -- namely a FF- and a HH-center. In well agreement with common understanding the FF-center results in being accompanied by a small lattice distortion whereas the HH-center is accompanied by a very large lattice deformation. Opposite to the common understanding the additional positive charge in the charge center results rather to be localized on a F43_4^{3-} complex than on a F2_2^--complex. From the ground states of the charge centers we derive binding energies, diffusion barriers and agglomeration energies for MM-center formation. These microscopic quantities are of fundamental interest to understand the dynamic processes which are initiated if the crystals interact with extreme intense deep ultra violet radiation. We further derive the equilibrium concentrations of charge centers in grown crystals.

Cite

@article{arxiv.cond-mat/0607725,
  title  = {Charge centers in CaF$_2$: Ab initio calculation of elementary physical properties},
  author = {M. Letz and L. Parthier},
  journal= {arXiv preprint arXiv:cond-mat/0607725},
  year   = {2009}
}

Comments

to appear in Phys. Rev. B in Aug. 2006, 11 Figs