In high-energy physics, there is a need to investigate alternative silicon sensor concepts that offer cost-efficient, large-area coverage. Sensors based on CMOS imaging technology present such a silicon sensor concept for tracking detectors. The CMOS Strips project investigates passive CMOS strip sensors fabricated by LFoundry in a 150nm technology. By employing the technique of stitching, two different strip sensor formats have been realised. The sensor performance is characterised based on measurements at the DESY II Test Beam Facility. The sensor response was simulated utilising Monte Carlo methods and electric fields provided by TCAD device simulations. This study shows that employing the stitching technique does not affect the hit detection efficiency. A first look at the electric field within the sensor and its impact on generated charge carriers is being discussed.
@article{arxiv.2405.08667,
title = {Characterisation and simulation of stitched CMOS strip sensors},
author = {Naomi Davis and Jan-Hendrik Arling and Marta Baselga and Leena Diehl and Jochen Dingfelder and Ingrid-Maria Gregor and Marc Hauser and Fabian Hügging and Tomasz Hemperek and Karl Jakobs and Michael Karagounis and Roland Koppenhöfer and Kevin Kröninger and Fabian Lex and Ulrich Parzefall and Arturo Rodriguez and Birkan Sari and Niels Sorgenfrei and Simon Spannagel and Dennis Sperlich and Tianyang Wang and Jens Weingarten and Iveta Zatocilova},
journal= {arXiv preprint arXiv:2405.08667},
year = {2024}
}
Comments
5 pages, 6 figures, submitted to Nuclear Instruments and Methods in Physics Research, Section A as a conference proceeding for the 13th International "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors