We have mesured the carrier recombination dynamics in InGaN/GaN multiple quantum wells over an unprecedented range in intensity. We find that at times shorter than 30\,ns, they follow an exponential form, and a power law at times longer than 1\,μs. To explain these biphasic dynamics, we propose a simple three-level model where a charge-separated state interplays with the radiative state through charge transfer following a tunneling mechanism. We show how the distribution of distances in charge-separated states controls the dynamics at long time. Our results imply that charge recombination happens on nearly-isolated clusters of localization centers.
@article{arxiv.1004.2463,
title = {Carrier recombination dynamics in InGaN/GaN multiple quantum wells},
author = {Colin-N. Brosseau and Mathieu Perrin and Carlos Silva and Richard Leonelli},
journal= {arXiv preprint arXiv:1004.2463},
year = {2010}
}
Comments
11 pages, 3 figures, accepted for publication in PHYSICAL REVIEW B