English

Burst-mode fs-laser direct writing for full-thickness oxidation of Ta thin films

Optics 2026-02-09 v1 Biological Physics

Abstract

Direct fs-laser (1030~nm/200~fs) write of a throughout oxide Ta2_{2}O5_{5} on a 200~nm Ta film was achieved using a combined ps- and ns- burst mode (Burst-in-Burst or BiB) of fs-pulse exposure at a high 0.6~MHz repetition rate. Few micrometers-wide lines were formed at the center of 12~μ\mum focal spot by controlled oxidation without ablation. The oxidized regions were flat and optically transparent. Wavelength-scale self-organized ripples of oxidized Ta2_{2}O5_{5} sub-1~μ\mum gratings were recorded by rastering a 1×11\times 1~mm2^2 area. The oxidized ripples with periodic pattern wavelength\sim wavelength were aligned with the polarization of the writing beam. Energy deposition in the burst-mode oxidation is discussed by comparing 200~fs and 20~ps BiB-mode writing modes. The presented strategy of self-guided oxidation with heat deposition by BiB fs-laser opens an opportunity for debris-free and annealing-free oxidation on a sub-wavelength scale.

Keywords

Cite

@article{arxiv.2602.06444,
  title  = {Burst-mode fs-laser direct writing for full-thickness oxidation of Ta thin films},
  author = {Lina Grineviciute and Hsin-Hui Huang and Haoran Mu and Nguyen Hoai An Le and Andrew Siao Ming Ang and Dan Kapsaskis and Tomas Katkus and Saulius Juodkazis},
  journal= {arXiv preprint arXiv:2602.06444},
  year   = {2026}
}