English

Bulk and surface electronic structure of Bi$_4$Te$_3$ from $GW$ calculations and photoemission experiments

Materials Science 2022-04-20 v1

Abstract

We present a combined theoretical and experimental study of the electronic structure of stoichiometric Bi4_4Te3_3, a natural superlattice of alternating Bi2_2Te3_3 quintuple layers and Bi bilayers. In contrast to the related semiconducting compounds Bi2_2Te3_3 and Bi1_1Te1_1, density functional theory predicts Bi4_4Te3_3 to be a semimetal. In this work, we compute the quasiparticle electronic structure of Bi4_4Te3_3 in the framework of the GWGW approximation within many-body perturbation theory. The quasiparticle corrections are found to modify the dispersion of the valence and conduction bands in the vicinity of the Fermi energy, leading to the opening of a small indirect band gap. Based on the analysis of the eigenstates, Bi4_4Te3_3 is classified as a dual topological insulator with bulk topological invariants Z2\mathbb{Z}_2 (1;111) and magnetic mirror Chern number nM=1n_M=1. The bulk GWGW results are used to build a Wannier-functions based tight-binding Hamiltonian that is further applied to study the electronic properties of the (111) surface. The comparison with our angle-resolved photoemission measurements shows excellent agreement between the computed and measured surface states and indicates the dual topological nature of Bi4_4Te3_3.

Keywords

Cite

@article{arxiv.2204.08856,
  title  = {Bulk and surface electronic structure of Bi$_4$Te$_3$ from $GW$ calculations and photoemission experiments},
  author = {Dmitrii Nabok and Murat Tas and Shotaro Kusaka and Engin Durgun and Christoph Friedrich and Gustav Bihlmayer and Stefan Blügel and Toru Hirahara and Irene Aguilera},
  journal= {arXiv preprint arXiv:2204.08856},
  year   = {2022}
}