"Berry Trashcan" Model of Interacting Electrons in Rhombohedral Graphene

We present a model for interacting electrons in a continuum band structure that resembles a ``trashcan'', with a flat bottom of radius $k_b$ beyond which the dispersion increases rapidly with velocity $v$. The form factors of the Bloch wavefunctions can be well-approximated by the Girvin-MacDonald-Platzman algebra, which encodes the uniform Berry curvature. We demonstrate how this model captures the salient features of the low-energy Hamiltonian for electron-doped pristine $n$-layer rhombohedral graphene (R$n$G) for appropriate values of the displacement field, and provide corresponding expressions for $k_b$. In the regime where the Fermi wavevector is close to $k_b$, we analytically solve the Hartree-Fock equations for a gapped Wigner crystal in several limits of the model. We introduce a new method, the sliver-patch approximation, which extends the previous few-patch approaches and is crucial in both differentiating even vs odd Chern numbers of the ground state and gapping the Hartree-Fock solution. A key parameter is the Berry flux $\varphi_{\text{BZ}}$ enclosed by the (flat) bottom of the band. We analytically show that there is a ferromagnetic coupling between the signs of $\varphi_{\text{BZ}}$ and the Chern number $C$ of the putative Wigner crystal. We also study the competition between the $C=0$ and $1$ solutions as a function of the interaction potential for parameters relevant to R$n$G. By exhaustive comparison to numerical Hartree-Fock calculations, we demonstrate how the analytic results capture qualitative trends of the phase diagram, as well as quantitative details such as the enhancement of the effective velocity. Our analysis paves the way for an analytic and numerical examination of the stability and competition beyond mean-field theory of the Wigner crystals in this model.