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Correlated Electron Effects in Chromium Trihalide Hetostructures with Graphene: A Tight-Binding Model Perspective

Mesoscale and Nanoscale Physics 2024-04-30 v1 Materials Science

Abstract

In this study, we present an effective tight-binding model for an accurate description of the lowest energy quadruplet of conduction band in a ferromagnetic CrX3_3 monolayer, tuned to the complementary \textit{ab initio} density functional theory simulations. This model, based on a minimum number of chromium orbitals, captures a distinctively flat dispersion in those bands but requires taking into account hoppings beyond nearest neighbours, revealing ligand-mediated electron pathways connecting remote chromium sites. Doping of states in the lowest conduction band of CrX3_3 requires charge transfer, which, according to recent studies, can occur in graphene(G)/CrX3_3 heterostructures. Here, we use the detailed description of the lowest conduction band in CrI3_3 to show that G/CrI3_3/G and G/CrI3_3 are type-II heterostructures where light holes in graphene would coexist with heavy electrons in the magnetic layer, where the latter can be characterised by Wigner parameter rs1520r_s\sim 15-20 (as estimated for hBN-encapsulated structures).

Keywords

Cite

@article{arxiv.2404.18858,
  title  = {Correlated Electron Effects in Chromium Trihalide Hetostructures with Graphene: A Tight-Binding Model Perspective},
  author = {Igor Rozhansky and Vladimir Fal'ko},
  journal= {arXiv preprint arXiv:2404.18858},
  year   = {2024}
}

Comments

5 figures

R2 v1 2026-06-28T16:10:03.761Z