Ballistic Composite Fermions in Semiconductor Nanostructures
Condensed Matter
2009-10-28 v1
Abstract
We report the results of two fundamental transport measurements at a Landau level filling factor of 1/2. The well known ballistic electron transport phenomena of quenching of the Hall effect in a mesoscopic cross-junction and negative magnetoresistance of a constriction are observed close to B~=~0 and . The experimental results demonstrate semi-classical charge transport by composite fermions, which consist of electrons bound to an even number of flux quanta.
Cite
@article{arxiv.cond-mat/9601063,
title = {Ballistic Composite Fermions in Semiconductor Nanostructures},
author = {J. E. F. Frost and C. -T. Liang and D. R. Mace and M. Y. Simmons and D. A. Ritchie and M. Pepper},
journal= {arXiv preprint arXiv:cond-mat/9601063},
year = {2009}
}
Comments
9 pages TeX 3.1415 C version 6.1, 3 PostScript figures