Backward diode composed of a metallic and semiconducting nanotube
Mesoscale and Nanoscale Physics
2009-11-07 v1
Abstract
The conditions necessary for a nanotube junction connecting a metallic and semiconducting nanotube to rectify the current are theoretically investigated. A tight binding model is used for the analysis, which includes the Hartree-Fock approximation and the Green's function method. It is found that the junction has a behavior similar to the backward diode if the gate electrode is located nearby and the Fermi level of the semiconducting tube is near the gap. Such a junction would be advantageous since the required length for the rectification could be reduced.
Keywords
Cite
@article{arxiv.cond-mat/0106040,
title = {Backward diode composed of a metallic and semiconducting nanotube},
author = {Ryo Tamura},
journal= {arXiv preprint arXiv:cond-mat/0106040},
year = {2009}
}
Comments
4 pages, RevTeX, uses epsf.sty