Transition metal dichalcogenides (TMDs) are optically active layered materials providing potential for fast optoelectronics and on-chip photonics. We demonstrate electrically driven single-photon emission from localised sites in tungsten diselenide (WSe2) and tungsten disulphide (WS2). To achieve this, we fabricate a light emitting diode structure comprising single layer graphene, thin hexagonal boron nitride and TMD mono- and bi-layers. Photon correlation measurements are used to confirm the single-photon nature of the spectrally sharp emission. These results present the TMD family as a platform for hybrid, broadband, atomically precise quantum photonics devices.
@article{arxiv.1603.08795,
title = {Atomically thin quantum light emitting diodes},
author = {Carmen Palacios Berraquero and Matteo Barbone and Dhiren M. Kara and Xiaolong Chen and Ilya Goykhman and Duhee Yoon and Anna K. Ott and Jan Beitner and Kenji Watanabe and Takashi Taniguchi and Andrea C. Ferrari and Mete Atatüre},
journal= {arXiv preprint arXiv:1603.08795},
year = {2016}
}