We present a pulsing protocol that significantly increases the endurance of a titanium-manganite interface used as a binary memory cell. The core of this protocol is an algorithm that searches for the proper values for the set and reset pulses, canceling the drift in the resistance values. A set of experiments show the drift-free operation for more than 105 switching cycles, as well as the detrimental effect by changing the amplitude of pulses indicated by the protocol. We reproduced the results with a numerical model, which provides information on the dynamics of the oxygen vacancies during the switching cycles.
@article{arxiv.1102.4554,
title = {Asymmetric pulsing for reliable operation of titanium/manganite memristors},
author = {F. Gomez-Marlasca and N. Ghenzi and P. Stoliar and M. J. Sánchez and M. J. Rozenberg and G. Leyva and P. Levy},
journal= {arXiv preprint arXiv:1102.4554},
year = {2015}
}
Comments
10 pages, 4 figures. To be published in Applied Physics Letters