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A ringing free bit addressing scheme for magnetic memories like MRAM (magnetic random access memory) is proposed. As in standard MRAM addressing schemes the switching of a selected cell is obtained by the combination of two half-select…
The resistance state of filamentary memristors can be tuned by relocating only a few atoms at interatomic distances in the active region of a conducting filament. Thereby the technology holds promise not only in its ultimate downscaling…
We investigate the switching of a magnetic nanoparticle comprising the middle free layer of a memory cell based on a double magnetic tunnel junction under the combined effect of spin-polarized current and weak on-chip magnetic field. We…
Progress in high-performance computing demands significant advances in memory technology. Among novel memory technologies that promise efficient device operation on a sub-ns timescale, resistance switching between charge ordered phases of…
We propose a magnetostirring protocol to create persistent currents on an annular system. Under this protocol, polar bosons confined in a three-well ring circuit reach a state with high average circulation. We model the system with an…
Recently we demonstrated experimentally that microwave oscillators based on the time delay feedback provided by traveling spin waves could operate as reservoir computers. In the present paper, we extend this concept by adding the feature of…
With ultra-fast writing capacity and high reliability, the spin-orbit torque is regarded as a promising alternative to fabricate next-generation magnetic random access memory. However, the three-terminal setup can be challenging when…
Nanoscale metal oxide memristors have potential in the development of brain-inspired computing systems that are scalable and efficient1-3. In such systems, memristors represent the native electronic analogues of the biological synapses.…
Quantum machine learning algorithms based on parameterized quantum circuits are promising candidates for near-term quantum advantage. Although these algorithms are compatible with the current generation of quantum processors, device noise…
We present a computationally inexpensive yet accurate phenomenological model of memristive behavior in titanium dioxide devices by fitting experimental data. By design, the model predicts most accurately I-V relation at small non-disturbing…
The protection of qubit coherence is an essential task in order to build a practical quantum computer able to manipulate, store and read quantum information with a high degree of fidelity. Recently, it has been proposed to increase the…
Improving coherence times of quantum bits is a fundamental challenge in the field of quantum computing. With long-lived qubits it becomes, however, inefficient to wait until the qubits have relaxed to their ground state after completion of…
We propose a dynamical approach to quantum memories using a synchronous oscillator-cavity model, in which the coupling is shaped in time to provide the optimum interface to a symmetric input pulse. This overcomes the known difficulties of…
A new class of spin-transfer torque magnetic random access memory (STT-MRAM) is discussed, in which writing is achieved using thermally initiated magnonic current pulses as an alternative to conventional electric current pulses. The…
We present a model for implementing fast entangling gates (${\sim}1~\mu$s) with ultra-fast pulses in arbitrarily long ion chains, that requires low numbers of pulses and can be implemented with laser repetition rates well within…
High-speed magnetization switching of a nanomagnet is necessary for faster information processing. The ballistic switching by a pulsed magnetic filed is a promising candidate for the high-speed switching. It is known that the switching…
In many cases, the behavior of physical memristive devices can be relatively well captured by using a single internal state variable. This study investigates the low-power control of first-order memristive devices to derive the most…
We show a pulse-efficient circuit transpilation framework for noisy quantum hardware. This is achieved by scaling cross-resonance pulses and exposing each pulse as a gate to remove redundant single-qubit operations with the…
We demonstrate a dual-rail optical Raman memory inside a polarization interferometer; this enables us to store polarization-encoded information at GHz bandwidths in a room-temperature atomic ensemble. By performing full process tomography…
We present a randomized dynamical decoupling (DD) protocol that can improve the performance of any given deterministic DD, by using no more than two additional pulses. Our construction is implemented by probabilistically applying sequences…