Perovskite SrRuO3 is a prototypical itinerant ferromagnet which allows interface engineering of its electronic and magnetic properties. We report synthesis and investigation of atomically flat artificial multilayers of SrRuO3 with the spin-orbit semimetal SrIrO3 in combination with band-structure calculations with a Hubbard U term and topological analysis. They reveal an electronic reconstruction and emergence of flat Ru-4dxz bands near the interface, ferromagnetic interlayer coupling and negative Berry-curvature contribution to the anomalous Hall effect. We analyze the Hall effect and magnetoresistance measurements as a function of the field angle from out of plane towards in-plane orientation (either parallel or perpendicular to the current direction) by a two-channel model. The magnetic easy direction is tilted by about 20∘ from the sample normal for low magnetic fields, rotating towards the out-of-plane direction by increasing fields. Fully strained epitaxial growth enables a strong anisotropy of magnetoresistance. An additional Hall effect contribution, not accounted for by the two-channel model is compatible with stable skyrmions only up to a critical angle of roughly 45∘ from the sample normal. Within about 20∘ from the thin film plane an additional peak-like contribution to the Hall effect suggests the formation of a non-trivial spin structure.
@article{arxiv.2105.13037,
title = {Angular dependence of Hall effect and magnetoresistance in SrRuO$_3$-SrIrO$_3$ heterostructures},
author = {Sven Esser and Jiongyao Wu and Sebastian Esser and Robert Gruhl and Anton Jesche and Vladimir Roddatis and Vasily Moshnyaga and Rossitza Pentcheva and Philipp Gegenwart},
journal= {arXiv preprint arXiv:2105.13037},
year = {2021}
}