English

Analysis of a new implicit solver for a semiconductor model

Numerical Analysis 2020-09-15 v1 Numerical Analysis

Abstract

We present and analyze a new iterative solver for implicit discretizations of a simplified Boltzmann-Poisson system. The algorithm builds on recent work that incorporated a sweeping algorithm for the Vlasov-Poisson equations as part of nested inner-outer iterative solvers for the Boltzmann-Poisson equations. The new method eliminates the need for nesting and requires only one transport sweep per iteration. It arises as a new fixed-point formulation of the discretized system which we prove to be contractive for a given electric potential. We also derive an accelerator to improve the convergence rate for systems in the drift-diffusion regime. We numerically compare the efficiency of the new solver, with and without acceleration, with a recently developed nested iterative solver.

Keywords

Cite

@article{arxiv.2009.05626,
  title  = {Analysis of a new implicit solver for a semiconductor model},
  author = {Victor P. DeCaria and Cory D. Hauck and M. Paul Laiu},
  journal= {arXiv preprint arXiv:2009.05626},
  year   = {2020}
}

Comments

25 pages, 10 figures

R2 v1 2026-06-23T18:29:00.353Z