In this paper, we present a physics-based analytical model for CIGS solar cells that describes the illumination- and temperature-dependent current-voltage (I-V) characteristics and accounts for the statistical shunt variation of each cell. The model is derived by solving the drift-diffusion transport equation so that its parameters are physical, and, therefore, can be obtained from independent characterization experiments. The model is validated against CIGS I-V characteristics as a function of temperature and illumination intensity. This physics-based model can be integrated into a large-scale simulation framework to optimize the performance of solar modules as well as predict the long-term output yields of photovoltaic farms under different environmental conditions.
@article{arxiv.1702.05676,
title = {An Illumination- and Temperature-Dependent Analytical Model for Copper Indium Gallium Diselenide (CIGS) Solar Cells},
author = {Xingshu Sun and Timothy Silverman and Rebekah Garris and Chris Deline and Muhammad Ashraful Alam},
journal= {arXiv preprint arXiv:1702.05676},
year = {2018}
}