Alloy effects in GaInN/GaN heterostructures

Duc Phuong Nguyen; Nicolas Regnault; Robson Ferreira; Gerald Bastard

Alloy effects in GaInN/GaN heterostructures

Condensed Matter 2007-05-23 v1

Authors: Duc Phuong Nguyen , Nicolas Regnault , Robson Ferreira , Gerald Bastard

Abstract

We show that the large band offsets between GaN and InN and the heavy carrier effective masses preclude the use of the Virtual Crystal Approximation to describe the electronic structure of Ga_(1-x)In_(x)N/GaN heterostructures while this approximation works very well for the Ga_(1-x)In_(x)As/GaAs heterostructures.

Keywords

GaInN/GaN heterostructures band offsets effective masses Virtual Crystal Approximation electronic structure

Cite

@article{arxiv.cond-mat/0311133,
  title  = {Alloy effects in GaInN/GaN heterostructures},
  author = {Duc Phuong Nguyen and Nicolas Regnault and Robson Ferreira and Gerald Bastard},
  journal= {arXiv preprint arXiv:cond-mat/0311133},
  year   = {2007}
}

Comments

submitted to Applied Physics Letter

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