The concept of All-Back-Schottky-Contact (ABSC) thin-film photovoltaic devices is introduced and evaluated using 2D numerical simulation. The built-in field is generated by reach-through Schottky junctions with two metals of different work functions in an alternating, side-by-side pattern along the back of the device. This approach minimizes the number of interfaces through which charge transport is required while eliminating the need for transparent conductive front contacts, pn junctions, and scribing. Performance metrics are calculated for a range of design parameters and it is shown that passivation of the front surface and back contacts is critical to achieve efficiencies near 20% using only one layer of material deposited on the back contacts. This design paradigm may afford a wide range of passivation materials since both electrical conduction and optical transparency would not be required of any one passivation layer.