English

Aharonov-Bohm effect in clean strong topological insulator wires

Mesoscale and Nanoscale Physics 2014-09-30 v1

Abstract

Surface electrons of strong topological insulator wires acquire a Berry phase difference of π\pi on orbiting the wire. This can be detected in response of clean wires (whose Fermi level is tuned to the Dirac point) to the presence of the Aharonov-Bohm flux. Specifically, at half-odd integer applied flux (in units of hc/ehc/e), long wires undergo semimetal-semiconductor transitions characterized by logarithmically divergent susceptibility. Associated with these are oscillations of magnetization (persistent current) that vanish both at integer and half-odd integer flux. Additionally wires of arbitrary aspect ratio exhibit conductance maxima at half-odd integer applied flux and minima at integer flux. For long wires the maxima are sharp with their height approaching e2/he^{2}/h. Short wires are characterized by a universal conductivity e2/πhe^{2}/\pi h attained in the disc limit.

Keywords

Cite

@article{arxiv.1409.7974,
  title  = {Aharonov-Bohm effect in clean strong topological insulator wires},
  author = {Eugene B. Kolomeisky and Joseph P. Straley},
  journal= {arXiv preprint arXiv:1409.7974},
  year   = {2014}
}

Comments

4 pages, 3 figures