A Non-Volatile Heterogeneous Quantum Dot III-V/Si DFB Laser with Optical Memristive Behavior
Abstract
In this work, we introduce a non-volatile heterogeneous quantum dot (QD) III-V/Al2O3/Si distributed feedback (DFB) laser exhibiting optical memristive behavior. The device operates in the O-band (~1300 nm) with a threshold current density of 234 A/cm2 and a side-mode suppression ratio exceeding 48 dB. Co-integrated Al2O3-based memristors produce bipolar resistive switching, yielding non-volatile wavelength shifts of ~ 46 pm and ~ 17 dB peak power contrast with zero static holding power. The III-V/Al2O3/Si heterojunction memristor I-V hysteresis is also modeled. This new device enables simultaneous coherent light generation and persistent optical state storage, establishing a new class of active photonic memory for neuromorphic and reconfigurable WDM applications.
Keywords
Cite
@article{arxiv.2605.22577,
title = {A Non-Volatile Heterogeneous Quantum Dot III-V/Si DFB Laser with Optical Memristive Behavior},
author = {Stanley Cheung and Bassem Tossoun and Di Liang and Yuan Yuan and Yingtao Hu and Geza Kurczveil and Xucheng Yang and Raymond Beausoleil},
journal= {arXiv preprint arXiv:2605.22577},
year = {2026}
}
Comments
13 pages, 8 figures