English

A New Magnetic Topological Quantum Material Candidate by Design

Materials Science 2019-03-12 v1 Strongly Correlated Electrons

Abstract

Magnetism, when combined with an unconventional electronic band structure, can give rise to forefront electronic properties such as the quantum anomalous Hall effect, axion electrodynamics, and Majorana fermions. Here we report the characterization of high-quality crystals of EuSn2_2P2_2, a new quantum material specifically designed to engender unconventional electronic states plus magnetism. EuSn2_2P2_2 has a layered, Bi2_2Te3_3-type structure. Ferromagnetic interactions dominate the Curie-Weiss susceptibility, but a transition to antiferromagnetic ordering occurs near 30 K. Neutron diffraction reveals that this is due to two-dimensional ferromagnetic spin alignment within individual Eu layers and antiferromagnetic alignment between layers - this magnetic state surrounds the Sn-P layers at low temperatures. The bulk electrical resistivity is sensitive to the magnetism. Electronic structure calculations reveal that EuSn2_2P2_2 might be a strong topological insulator, which can be a new magnetic topological quantum material (MTQM) candidate. The calculations show that surface states should be present, and they are indeed observed by ARPES measurements.

Keywords

Cite

@article{arxiv.1903.03888,
  title  = {A New Magnetic Topological Quantum Material Candidate by Design},
  author = {Xin Gui and Ivo Pletikosic and Huibo Cao and Hung-Ju Tien and Xitong Xu and Ruidan Zhong and Guangqiang Wang and Tay-Rong Chang and Shuang Jia and Tonica Valla and Weiwei Xie and Robert J. Cava},
  journal= {arXiv preprint arXiv:1903.03888},
  year   = {2019}
}

Comments

30 page, 12 figures

R2 v1 2026-06-23T08:03:13.993Z