A key to room-temperature ferromagnetism in Fe-doped ZnO: Cu

S-J. Han; J. W. Song; C. -H. Yang; S. H. Park; J. -H. Park; Y. H. Jeong

doi:10.1063/1.1525885

A key to room-temperature ferromagnetism in Fe-doped ZnO: Cu

Strongly Correlated Electrons 2009-11-07 v1 Materials Science

Authors: S-J. Han , J. W. Song , C. -H. Yang , S. H. Park , J. -H. Park , Y. H. Jeong

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Abstract

Successful synthesis of room-temperature ferromagnetic semiconductors, Zn $_{1-x}$ Fe $_{x}$ O, is reported. The essential ingredient in achieving room-temperature ferromagnetism in bulk Zn $_{1-x}$ Fe $_{x}$ O was found to be additional Cu doping. A transition temperature as high as 550 K was obtained in Zn $_{0.94}$ Fe $_{0.05}$ Cu $_{0.01}$ O; the saturation magnetization at room temperature reached a value of $0.75 \mu_{\rm B}$ per Fe. Large magnetoresistance was also observed below $100$ K.

Keywords

room-temperature ferromagnetism Fe-doped ZnO Cu doping diluted magnetic semiconductor magnetoresistance

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@article{arxiv.cond-mat/0208399,
  title  = {A key to room-temperature ferromagnetism in Fe-doped ZnO: Cu},
  author = {S-J. Han and J. W. Song and C. -H. Yang and S. H. Park and J. -H. Park and Y. H. Jeong},
  journal= {arXiv preprint arXiv:cond-mat/0208399},
  year   = {2009}
}

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11 pages, 4 figures; to appear in Appl. Phys. Lett

A key to room-temperature ferromagnetism in Fe-doped ZnO: Cu

Abstract

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