A HEMT-Based Cryogenic Charge Amplifier with sub-100 eVee Ionization Resolution for Massive Semiconductor Dark Matter Detectors

A. Phipps; A. Juillard; B. Sadoulet; B. Serfass; Y. Jin

doi:10.1016/j.nima.2019.06.022

A HEMT-Based Cryogenic Charge Amplifier with sub-100 eVee Ionization Resolution for Massive Semiconductor Dark Matter Detectors

Instrumentation and Detectors 2019-06-20 v4 Instrumentation and Methods for Astrophysics

Authors: A. Phipps , A. Juillard , B. Sadoulet , B. Serfass , Y. Jin

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Abstract

We present the measured baseline ionization resolution of a HEMT-based cryogenic charge amplifier coupled to a CDMS-II detector. The amplifier has been developed to allow massive semiconductor dark matter detectors to retain background discrimination at the low recoil energies produced by low-mass WIMPs. We find a calibrated baseline ionization resolution of $\sigma_E = 91\,\text{eV}_{ee}$ . To our knowledge, this is the best direct ionization resolution achieved with such massive ( $\approx$ 150 pF capacitance) radiation detectors.

Keywords

particle detector

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@article{arxiv.1611.09712,
  title  = {A HEMT-Based Cryogenic Charge Amplifier with sub-100 eVee Ionization Resolution for Massive Semiconductor Dark Matter Detectors},
  author = {A. Phipps and A. Juillard and B. Sadoulet and B. Serfass and Y. Jin},
  journal= {arXiv preprint arXiv:1611.09712},
  year   = {2019}
}

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Published in Nuclear Instruments and Methods in Physics Research Section A

A HEMT-Based Cryogenic Charge Amplifier with sub-100 eVee Ionization Resolution for Massive Semiconductor Dark Matter Detectors

Abstract

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