The electronic structure of CuIr2S4 has been investigated using various bulk-sensitive x-ray spectroscopic methods near the Ir L3-edge: resonant inelastic x-ray scattering (RIXS), x-ray absorption spectroscopy in the partial fluorescence yield (PFY-XAS) mode, and resonant x-ray emission spectroscopy (RXES). A strong RIXS signal (0.75 eV) resulting from a charge-density-wave gap opening is observed below the metal-insulator transition temperature of 230 K. The resultant modification of electronic structure is consistent with the density functional theory prediction. In the spin- and charge- dimer disordered phase induced by x-ray irradiation below 50 K, we find that a broad peak around 0.4 eV appears in the RIXS spectrum.
@article{arxiv.1104.5638,
title = {X-ray induced electronic structure change in CuIr$_2$S$_4$},
author = {H. Gretarsson and Jungho Kim and D. Casa and T. Gog and K. R. Choi and S. W. Cheong and Young-June Kim},
journal= {arXiv preprint arXiv:1104.5638},
year = {2012}
}